BC858BWT1G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 30 V, 100 MA, 150 MW, SC-70, SURFACE MOUNT
BC858BWT1G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 30 V, 100 MA, 150 MW, SC-70, SURFACE MOUNT
Description
General part information
BC858BW Series
The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BC858BWT1G |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 15 nA |
| DC Current Gain (hFE) (Min) | 220 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | SC-70-3 (SOT323) |
| Power - Max | 150 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 650 mV |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
Pricing
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CAD
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Documents
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