
1N4003G
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL

1N4003G
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
Description
General part information
1N4003G
Diode 200 V 1A Through Hole DO-204AL (DO-41)
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N4003G |
|---|---|
| Capacitance | 10 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | Axial, DO-204AL, DO-41 |
| Package Name | DO-204AL (DO-41) |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 1 V, 1 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
1N4001G Series - FIT MTTF Report
1N4003G - Material Composition Declaration
DO-41 MKT HQ2SD07-DO41-059 REV A
1N4001G SERIES - Datasheet
DECLARATION_LETTER_-_PRODUCT_SHELF_LIFE_REVB
1N4001G Series - Reliability Report
AN-1006 Power Diode Parameters and Characteristic Introduction
DO-204AL(DO-41) - Packing Information
1N4003G | Datasheet