DMN33D8LDWQ-7
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN33D8LDWQ-7
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN33D8LDWQ-7
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN33D8LDWQ-7 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 250 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Max) | 1.23 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 48 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SOT-363 |
| Power - Max (Ta) | 350 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 2.4 Ohm, 2.4 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
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