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DMP6250SFDF-7

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for U-DFN2020-6

DMP6250SFDF-7

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

General part information

DMP6250SFDF-7

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP6250SFDF-7
Current - Continuous Drain (Id) (Ta)3.2 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)8.9 nC
Input Capacitance (Ciss) (Max)612 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-UDFN Exposed Pad
Package NameU-DFN2020-6 (Type F)
Power Dissipation (Max)800 mW
Rds On (Max)155 mOhm, 155 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part