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FDP050AN06A0

FDP050AN06A0

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ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 80A, 5MΩ

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FDP050AN06A0

FDP050AN06A0

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 80A, 5MΩ

Find alt

Description

General part information

FDP050AN06A0

RDS(on) = 4.3mO (Typ.) @ VGS = 10V, ID = 80A

QG(tot) = 61nC (Typ.) @ VGS = 10V

Low Miller Charge

Technical Specifications

Parameters and characteristics for this part

SpecificationFDP050AN06A0
Current - Continuous Drain (Id) (Ta)18 A
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)80 nC, 80 nC
Input Capacitance (Ciss) (Max)3900 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)245 W
Rds On (Max)5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

    FDP050AN06A0 | ON Semiconductor | Zenode.ai