
HUF76009P3
ActiveON Semiconductor
N-CHANNEL POWER MOSFET

HUF76009P3
ActiveON Semiconductor
N-CHANNEL POWER MOSFET
Description
General part information
HUF76009P3
N-Channel 20 V 20A (Tc) 41W (Tc) Through Hole TO-220AB
Technical Specifications
Parameters and characteristics for this part
| Specification | HUF76009P3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 13 nC |
| Input Capacitance (Ciss) (Max) | 470 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220AB |
| Power Dissipation (Max) | 41 W |
| Rds On (Max) | 27 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available