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IRFU2405PBF - IPAK (TO-251)

IRFU2405PBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL ; IPAK TO-251 PACKAGE; 16 MOHM;

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IRFU2405PBF - IPAK (TO-251)

IRFU2405PBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL ; IPAK TO-251 PACKAGE; 16 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFU2405PBF
Current - Continuous Drain (Id) @ 25°C56 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds2430 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs16 mOhm
Supplier Device PackageIPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRFU2405 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources