
DMN3060LWQ-7
ActiveDiodes Inc
TRANSISTOR MOSFET N-CHANNEL ENHANCEMENT 30V 2.6A 3-PIN SOT-323 T/R

DMN3060LWQ-7
ActiveDiodes Inc
TRANSISTOR MOSFET N-CHANNEL ENHANCEMENT 30V 2.6A 3-PIN SOT-323 T/R
Description
General part information
DMN3060LWQ-7
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3060LWQ-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 2.6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 5.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 395 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | SOT-323 |
| Power Dissipation (Max) | 500 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 60 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.8 V |
Pricing
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