Zenode.ai Logo
DMN3060LWQ-7

DMN3060LWQ-7

Active
Diodes Inc

TRANSISTOR MOSFET N-CHANNEL ENHANCEMENT 30V 2.6A 3-PIN SOT-323 T/R

Find alt
DMN3060LWQ-7

DMN3060LWQ-7

Active
Diodes Inc

TRANSISTOR MOSFET N-CHANNEL ENHANCEMENT 30V 2.6A 3-PIN SOT-323 T/R

Find alt

Description

General part information

DMN3060LWQ-7

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3060LWQ-7
Current - Continuous Drain (Id) (Ta)2.6 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)5.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)395 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-70, SOT-323
Package NameSOT-323
Power Dissipation (Max)500 mW
QualificationAEC-Q101
Rds On (Max)60 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

    DMN3060LWQ-7 | Diodes Inc | Zenode.ai