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QX817N-FeH-ME

QX817N-FeH-ME

Active
Beking Optoelectronics

OPTOISOLATOR TRANSISTOR 817

QX817N-FeH-ME

QX817N-FeH-ME

Active
Beking Optoelectronics

OPTOISOLATOR TRANSISTOR 817

Description

General part information

QX817N-FeH-ME

Optoisolator Output 5000Vrms 1 Channel 4-DIP-M

Technical Specifications

Parameters and characteristics for this part

SpecificationQX817N-FeH-ME
Current Transfer Ratio (Max)600 %
Current Transfer Ratio (Min)80 %
Fall Time (Typ)3 µs
Input TypeDC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature (Max)110 °C
Operating Temperature (Min)-55 °C
Package Length0.3 in
Package Name4-DIP-M, 4-DIP
Package Width7.62 mm
Rise Time (Typ)4 µs
Vce Saturation (Max)200 mV
Voltage - Isolation5000 Vrms

Pricing

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CAD

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Documents

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