Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TS27M2BIDT | TS27M2B Series |
|---|---|---|
| null | - | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
TS27M2B Series
Micropower, high voltage CMOS op-amp
| Part |
|---|
STMicroelectronics TS27M2BIDT |
STMicroelectronics TS27M2BIDT |
Description
General part information
TS27M2B Series
These devices are low cost, low power dual operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an excellent consumption-speed ratio. These series are ideally suited for low consumption applications.
Three power consumptions are available allowing to have always the best consumption-speed ratio:ICC= 10µA/amp.: TS27L2 (very low power)ICC= 150µA/amp.: TS27M2 (low power)ICC= 1mA/amp.: TS272 (standard)
These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 2).
Documents
Technical documentation and resources