NVMFWS004N04XMT1G
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 40 V, 65 A, MΩ4.7
NVMFWS004N04XMT1G
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 40 V, 65 A, MΩ4.7
Description
General part information
NVMFWS004N04XMT1G
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFWS004N04XMT1G |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 66 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 10.6 nC, 10.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 669 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 5 Leads |
| Package Length | 4.9 mm |
| Package Name | 8-PowerTDFN, 5-DFNW, 8-SOFL-WF |
| Package Width | 5.9 mm |
| Power Dissipation (Max) | 38 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources