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NSV40302PDR2G

NSV40302PDR2G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, COMPLEMENTARY, 40 V, 6.0 A/ REEL

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NSV40302PDR2G

NSV40302PDR2G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, COMPLEMENTARY, 40 V, 6.0 A/ REEL

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Description

General part information

NSS40302PD Series

ON Semiconductor's e2PowerEdge family of Low VCE(sat)Bipolar Transistors are surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

Technical Specifications

Parameters and characteristics for this part

SpecificationNSV40302PDR2G
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)180
Frequency - Transition100 MHz
Mounting TypeSurface Mount
NPN Count1
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
PNP Count1
Power - Max653 mW
Transistor TypePNP, NPN
Vce Saturation (Max)115 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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CAD

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