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TSM080NB03CR

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Taiwan Semiconductor Corporation

30V, 59A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

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Symbol, Footprint, 3D Model

TSM080NB03CR

Active
Taiwan Semiconductor Corporation

30V, 59A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Find alt

Description

General part information

TSM080NB03CR

30V, 59A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM080NB03CR
Current - Continuous Drain (Id) (Ta)14 A
Current - Continuous Drain (Id) (Tc)59 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20 nC
Input Capacitance (Ciss) (Max)1097 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-PDFN
Package Width6 mm
Power Dissipation (Max)3.1 W, 55.6 W
Rds On (Max)8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part