FGAF40S65AQ
ActiveON Semiconductor
IGBT, 650 V, 40 A FIELD STOP TRENCH
FGAF40S65AQ
ActiveON Semiconductor
IGBT, 650 V, 40 A FIELD STOP TRENCH
Description
General part information
FGAF40S65AQ
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4thgeneration of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications
Technical Specifications
Parameters and characteristics for this part
| Specification | FGAF40S65AQ |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Gate Charge | 75 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-3P-3 Full Pack |
| Package Name | TO-3PF-3 |
| Power - Max | 94 W |
| Reverse Recovery Time (trr) | 274 ns |
| Switching Energy (Off) | 62 µJ |
| Switching Energy (On) | 132 µJ |
| Td (off) @ 25°C | 81.6 ns |
| Td (on) @ 25°C | 17.8 ns |
| Test Condition Current | 10 A |
| Test Condition Resistance | 6 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources