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MJE180G

MJE180G

Active
ON Semiconductor

TRANSISTOR GP BJT NPN 40V 3A 3-PIN TO-225 BOX

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MJE180G

MJE180G

Active
ON Semiconductor

TRANSISTOR GP BJT NPN 40V 3A 3-PIN TO-225 BOX

Find alt

Description

General part information

MJE180G

Collector-Emitter Sustaining Voltage 40 V

High DC Current Gain

High Current-Gain - Bandwidth Product

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE180G
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)50
Frequency - Transition50 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-225AA, TO-126-3
Package NameTO-126
Power - Max1.5 W
Transistor TypeNPN
Vce Saturation (Max)1.7 V
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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CAD

3D models and CAD resources for this part