BPW96C

Active

Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPW96C

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Dark (Id) (Max) [Max]	200 nA
Mounting Type	Through Hole
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	T 1 3/4, Radial
Package / Case [diameter]	5 mm
Power - Max [Max]	150 mW
Viewing Angle [custom]	40 °
Voltage - Collector Emitter Breakdown (Max) [Max]	70 V
Wavelength	850 nm

Part	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Package / Case [diameter]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Viewing Angle [custom]	Current - Dark (Id) (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Wavelength	Orientation
Vishay General Semiconductor - Diodes Division BPW96C	100 °C	-40 °C	150 mW	5 mm	Radial T 1 3/4	70 V	40 °	200 nA	Through Hole	50 mA	850 nm	Top View
Vishay General Semiconductor - Diodes Division BPW96	100 °C	-40 °C	150 mW	5 mm	Radial T 1 3/4	70 V	40 °	200 nA	Through Hole	50 mA	850 nm	Top View

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Phototransistors 850nm Top View Radial, 5mm Dia (T 1 3/4)

Technical documentation and resources