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DMTH61M8LPSQ-13

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Diodes Inc

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for PowerDI5060-8

DMTH61M8LPSQ-13

Active
Diodes Inc

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMTH61M8LPSQ-13

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH61M8LPSQ-13
Current - Continuous Drain (Id) (Tc)225 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)115.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)8320 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePowerDI5060-8 (Type K)
Power Dissipation (Max)187.5 W, 3.2 W
QualificationAEC-Q101
Rds On (Max)1.6 mOhm, 1.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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