
DMTH61M8LPSQ-13
ActiveDiodes Inc
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

DMTH61M8LPSQ-13
ActiveDiodes Inc
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH61M8LPSQ-13
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH61M8LPSQ-13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 225 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 115.5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 8320 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 (Type K) |
| Power Dissipation (Max) | 187.5 W, 3.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.6 mOhm, 1.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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