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MJ21196G

MJ21196G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, AUDIO, NPN, 250 V, 16 A, 250 W, TO-3, THROUGH HOLE

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MJ21196G

MJ21196G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, AUDIO, NPN, 250 V, 16 A, 250 W, TO-3, THROUGH HOLE

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Description

General part information

MJ21196G

The MJ21196G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationMJ21196G
Current - Collector (Ic) (Max)16 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)25
Frequency - Transition4 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-3, TO-204AA
Package NameTO-204 (TO-3)
Power - Max250 VA
Transistor TypeNPN
Vce Saturation (Max)4 V, 4 V
Voltage - Collector Emitter Breakdown (Max)250 V

Pricing

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CAD

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Documents

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