
NSVS1001CLTWG
ActiveON Semiconductor
BIPOLAR TRANSISTOR -100V, -2.5A PNP LOW VCE(SAT) PNP SINGLE LFPAK8

NSVS1001CLTWG
ActiveON Semiconductor
BIPOLAR TRANSISTOR -100V, -2.5A PNP LOW VCE(SAT) PNP SINGLE LFPAK8
Description
General part information
NSVS1001CLTWG
This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications, AEC-Q101 qualified, PPAP capable.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSVS1001CLTWG |
|---|---|
| Current - Collector (Ic) (Max) | 2.5 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 140 |
| Frequency - Transition | 300 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 4-LFPAK, SOT-1023 |
| Package Length | 5 mm |
| Package Name | LFPAK4 |
| Package Width | 6 mm |
| Power - Max | 800 mW |
| Qualification | AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources