STTH8006W

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STMicroelectronics

DIODE GEN PURP 600V 80A DO247

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STMicroelectronics

DIODE GEN PURP 600V 80A DO247

Technical Specifications

Parameters and characteristics for this part

Specification	STTH8006W

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-247-2 (Straight Leads)
Reverse Recovery Time (trr)	105 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-247
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

DIODE GEN PURP 600V 80A DO247

Part	Package / Case	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]
STMicroelectronics STTH8006W	DO-247-2 (Straight Leads)	50 µA	200 mA, 500 ns	DO-247	Standard	1.6 V	80 A	Through Hole	105 ns	175 °C	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 80A Through Hole DO-247

Technical documentation and resources