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FQP630

FQP630

Obsolete
ON Semiconductor

MOSFET N-CH 200V 9A TO220-3

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FQP630

FQP630

Obsolete
ON Semiconductor

MOSFET N-CH 200V 9A TO220-3

Find alt

Description

General part information

FQP630

N-Channel 200 V 9A (Tc) 78W (Tc) Through Hole TO-220-3

Technical Specifications

Parameters and characteristics for this part

SpecificationFQP630
Current - Continuous Drain (Id) (Tc)9 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)25 nC
Input Capacitance (Ciss) (Max)550 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)78 W
Rds On (Max)400 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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