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JANTXV2N3700UB/TR

JANTXV2N3700UB/TR

Active
Microchip Technology

BIPOLAR TRANSISTORS - BJT 80V 1A 500MW ROUND-END SMALL-SIGNAL BJT TR

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JANTXV2N3700UB/TR

JANTXV2N3700UB/TR

Active
Microchip Technology

BIPOLAR TRANSISTORS - BJT 80V 1A 500MW ROUND-END SMALL-SIGNAL BJT TR

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Description

General part information

JANTXV2N3700UB-Transistor Series

This specification covers the performance requirements for NPN, silicon, low-power 2N3019, 2N3057A and 2N3700 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/391. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eleven radiation levels are provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-205AA and TO-205AD (formerly TO-5 and TO-39), TO-206AB (formerlyTO-46), three terminal round metal can TO-206AA (formerly TO-18), and four terminal SMD package UB and UBC.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N3700UB/TR
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)10 nA
DC Current Gain (hFE) (Min)50
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseNo Lead, 3-SMD
Package NameUB
Power - Max0.5 W
QualificationMIL-PRF-19500, 391
Transistor TypeNPN
Vce Saturation (Max)500 mV
Voltage - Collector Emitter Breakdown (Max)80 V

Pricing

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