G60N04D52

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Goford Semiconductor

MOSFET 40V 35A 8DFN

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Goford Semiconductor

MOSFET 40V 35A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	G60N04D52

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1998 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	20 W
Rds On (Max) @ Id, Vgs [Max]	9 mOhm
Supplier Device Package	8-DFN (4.9x5.75)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

MOSFET 40V 35A 8DFN

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]
Goford Semiconductor G60N04D52	8-PowerTDFN	1998 pF	35 A	-55 °C	150 °C	20 W	27 nC	40 V	2.5 V	Surface Mount	8-DFN (4.9x5.75)	MOSFET (Metal Oxide)	9 mOhm

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General part information

Mosfet Array 40V 35A (Tc) 20W (Tc) Surface Mount 8-DFN (4.9x5.75)

Technical documentation and resources