MMBF170
ActivePOWER MOSFET, N CHANNEL, 60 V, 500 MA, 5 OHM, SOT-23, SURFACE MOUNT
MMBF170
ActivePOWER MOSFET, N CHANNEL, 60 V, 500 MA, 5 OHM, SOT-23, SURFACE MOUNT
Description
General part information
MMBF170
This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | MMBF170 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 500 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 40 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 300 mW |
| Rds On (Max) | 5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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