Specification	NTMFD001N03P9

Channel Count	2
Configuration	N-Channel, Asymmetrical
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	11 A
Current - Continuous Drain (Id) (Ta) (2)	25 A
Current - Continuous Drain (Id) (Tc)	57 A
Current - Continuous Drain (Id) (Tc) (2)	165 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	7.9 nC, 43 nC
Input Capacitance (Ciss) (Max)	6575 pF, 1224 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	5 mm
Package Name	8-PQFN
Package Width	6 mm
Power - Max (Ta)	1.04 W, 960 mW
Power - Max (Tc)	41 W, 25 W
Rds On (Max)	1 mOhm, 5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	3 V

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