71V416S10BE
ObsoleteRenesas Electronics Corporation
3.3V 256K X 16 ASYNCHRONOUS STATIC RAM CENTER PWR & GND PINOUT
71V416S10BE
ObsoleteRenesas Electronics Corporation
3.3V 256K X 16 ASYNCHRONOUS STATIC RAM CENTER PWR & GND PINOUT
Description
General part information
71V416 Series
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Technical Specifications
Parameters and characteristics for this part
| Specification | 71V416S10BE |
|---|---|
| Access Time | 10 ns |
| Memory Depth | 256 K |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 4 Mbit |
| Memory Type | Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 70 °C |
| Operating Temperature (Min) | 0 °C |
| Package / Case | 48-TFBGA |
| Package Length | 9 mm |
| Package Name | 48-CABGA |
| Package Width | 9 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 3 V |
| Write Cycle Time - Page | 10 ns |
| Write Cycle Time - Word | 10 ns |
Pricing
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