G120P03S2

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Goford Semiconductor

MOSFET 30V 16A 8SOP

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Goford Semiconductor

MOSFET 30V 16A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G120P03S2

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2835 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

MOSFET 30V 16A 8SOP

Part	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type
Goford Semiconductor G120P03S2	14 mOhm	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	35 nC	8-SOP	16 A	-55 °C	150 °C	1.4 W	30 V	2835 pF	2.5 V	Surface Mount

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General part information

Mosfet Array 30V 16A (Tc) 1.4W (Tc) Surface Mount 8-SOP

Technical documentation and resources