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UF3C065080B3

UF3C065080B3

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ON Semiconductor

SILICON CARBIDE (SIC) CASCODE JFET - ELITESIC,  80 MOHM, 650V, D2PAK-3L

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UF3C065080B3

UF3C065080B3

Active
ON Semiconductor

SILICON CARBIDE (SIC) CASCODE JFET - ELITESIC,  80 MOHM, 650V, D2PAK-3L

Find alt

Description

General part information

UF3C065080B3

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads

Technical Specifications

Parameters and characteristics for this part

SpecificationUF3C065080B3
Current - Continuous Drain (Id) (Tc)25 A, 25 A
Drain to Source Voltage (Vdss)650 V
FET TypeN-Channel
Mounting TypeSurface Mount
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
TechnologySiCFET (Cascode SiCJFET)
Vgs (Max)25 V

Pricing

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CAD

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