2N6052G
ObsoleteON Semiconductor
12 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR
2N6052G
ObsoleteON Semiconductor
12 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR
Description
General part information
2N6052G
This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6052G |
|---|---|
| Current - Collector (Ic) (Max) | 12 A |
| Current - Collector Cutoff (Max) | 1 mA |
| DC Current Gain (hFE) (Min) | 750 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-3, TO-204AA |
| Package Name | TO-204 (TO-3) |
| Power - Max | 150 W |
| Transistor Type | PNP, Darlington |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
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Documents
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