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Description

General part information

TSC966CT B0G

Bipolar (BJT) Transistor NPN 400 V 300 mA 50MHz 1 W Through Hole TO-92

Technical Specifications

Parameters and characteristics for this part

SpecificationTSC966CT B0G
Current - Collector (Ic) (Max)0.3 mA
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)100
Frequency - Transition50 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92
Power - Max1 VA
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)400 V

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