NTMYS020N08LHTWG
ActiveON Semiconductor
POWER MOSFET 80 V, 30A, 19.5MΩ SINGLE N-CHANNEL
NTMYS020N08LHTWG
ActiveON Semiconductor
POWER MOSFET 80 V, 30A, 19.5MΩ SINGLE N-CHANNEL
Description
General part information
NTMYS020N08LHTWG
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMYS020N08LHTWG |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 8.7 A |
| Current - Continuous Drain (Id) (Tc) | 30 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 623 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 4-LFPAK, SOT-1023 |
| Package Length | 5 mm |
| Package Name | LFPAK4 |
| Package Width | 6 mm |
| Power Dissipation (Max) | 42 W, 3.5 W |
| Rds On (Max) | 19.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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