ACMSP2303T-HF

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Comchip Technology

MOSFET P-CH 30V 2.7A SOT23-3

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Comchip Technology

MOSFET P-CH 30V 2.7A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	ACMSP2303T-HF

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	155 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1 W, 2.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

MOSFET P-CH 30V 2.7A SOT23-3

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Grade
Comchip Technology ACMSP2303T-HF	22 nC	-55 °C	150 °C	3 V	P-Channel	Surface Mount	AEC-Q101	155 pF	2.7 A	20 V	SOT-23-3	1 W, 2.3 W	30 V	190 mOhm	MOSFET (Metal Oxide)	SC-59, SOT-23-3, TO-236-3	Automotive

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General part information

P-Channel 30 V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3

Technical documentation and resources

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