DMTH10H032LFVW-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH10H032LFVW-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH10H032LFVW-13
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH10H032LFVW-13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 26 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 11.9 nC |
| Input Capacitance (Ciss) (Max) | 683 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PowerDI3333-8 (SWP) Type UX |
| Power Dissipation (Max) | 1.7 W |
| Rds On (Max) | 30 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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