IL213AT

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Vishay General Semiconductor - Diodes Division

OPTOISO 4KV TRANS W/BASE 8SOIC

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Vishay General Semiconductor - Diodes Division

OPTOISO 4KV TRANS W/BASE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IL213AT

Current - DC Forward (If) (Max) [Max]	60 mA
Current Transfer Ratio (Min) [Min]	100 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Supplier Device Package	8-SOIC
Turn On / Turn Off Time (Typ)	3 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.3 V
Voltage - Isolation	4000 Vrms
Voltage - Output (Max) [Max]	30 V

Part	Current - DC Forward (If) (Max) [Max]	Current Transfer Ratio (Min) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Turn On / Turn Off Time (Typ)	Supplier Device Package	Number of Channels	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Voltage - Output (Max) [Max]	Vce Saturation (Max) [Max]
Vishay General Semiconductor - Diodes Division IL213AT	60 mA	100 %	100 °C	-55 °C	DC	4000 Vrms	1.3 V	3 µs	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Surface Mount	30 V	400 mV

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General part information

Optoisolator Transistor with Base Output 4000Vrms 1 Channel 8-SOIC

Technical documentation and resources