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INFINEON IHW20N65R5XKSA1

RGT60TS65DGC11

NRND
Rohm Semiconductor

IGBT, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 PINS

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INFINEON IHW20N65R5XKSA1

RGT60TS65DGC11

NRND
Rohm Semiconductor

IGBT, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 PINS

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Description

General part information

RGT60TS65DGC11

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss3) Short Circuit Withstand Time 5us4) Built in Very Fast & Soft Recovery FRD (RFN - Series)5) Pb - free Lead Plating ; RoHS Compliant

Technical Specifications

Parameters and characteristics for this part

SpecificationRGT60TS65DGC11
Current - Collector (Ic) (Max)55 A
Current - Collector Pulsed (Icm)90 A
Gate Charge58 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NameTO-247N
Power - Max194 W
Reverse Recovery Time (trr)58 ns
Td (off) @ 25°C100 ns
Td (on) @ 25°C29 ns
Test Condition Current30 A
Test Condition Resistance10 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2.1 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

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