TC6215 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC (TG) package. Both MOSFETs have integrated back to back gate-source Zener diode clamps and guaranteed RDS(ON) ratings down to 4.0V gate drive allowing them to be driven directly with standard 5.0V CMOS logic.

These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.