FDC365P
ObsoleteON Semiconductor
P-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET, -35V, -4.3A, 55MΩ
FDC365P
ObsoleteON Semiconductor
P-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET, -35V, -4.3A, 55MΩ
Description
General part information
FDC365P Series
This P-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low rDS(on)and optimized BVdsscapability to offer superior performance benefit in the applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDC365P |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.3 A |
| Drain to Source Voltage (Vdss) | 35 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 15 nC |
| Input Capacitance (Ciss) (Max) | 705 pF, 705 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | SuperSOT™-6 |
| Power Dissipation (Max) | 1.6 W |
| Rds On (Max) | 55 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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