Description
General part information
BAS4005E6327HTSA1
Silicon Schottky Diode
Technical Specifications
Parameters and characteristics for this part
| Specification | BAS4005E6327HTSA1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 120 mA |
| Current - Reverse Leakage | 1 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | PG-SOT23 |
| Reverse Recovery Time (trr) | 100 ps |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) | 1 V |
Pricing
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