Description
General part information
ISC012N04NM6ATMA1
The ISC012N04NM6 is part of the BiCOptiMOSTM6 40VNL product family, offering a benchmark solution for Normal Level (higher threshold voltage) required applications. A higher Vthfor the normal level portfolio means that only larger gate voltage spikes would cause unwanted turn-on. In addition, lower QGD/QGSratios (CGD/CGSdivider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC012N04NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 36 A |
| Current - Continuous Drain (Id) (Tc) | 232 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 64 nC |
| Input Capacitance (Ciss) (Max) | 4600 pF, 4600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8 FL |
| Power Dissipation (Max) | 125 W, 3 W |
| Rds On (Max) | 1.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.8 V |
Pricing
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