Description
General part information
IPW65R040CM8XKSA1
The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPW65R040CM8XKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 62 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 80 nC, 80 nC |
| Input Capacitance (Ciss) (Max) | 3796 pF, 3796 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-U06 |
| Power Dissipation (Max) | 329 W |
| Rds On (Max) | 40 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.7 V |
Pricing
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