MJD122T4G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 4 MHZ, 20 W, 8 A, 1000 ROHS COMPLIANT: YES
MJD122T4G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 4 MHZ, 20 W, 8 A, 1000 ROHS COMPLIANT: YES
Description
General part information
MJD122 Series
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD122T4G |
|---|---|
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 1000 |
| Frequency - Transition | 4 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 1.75 W |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 4 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources