UF3C120080B7S
ActiveSILICON CARBIDE (SIC) CASCODE JFET - ELITESIC, 85 MOHM, 1200V, D2PAK-7L
UF3C120080B7S
ActiveSILICON CARBIDE (SIC) CASCODE JFET - ELITESIC, 85 MOHM, 1200V, D2PAK-7L
Description
General part information
UF3C120080B7S Series
EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads
Technical Specifications
Parameters and characteristics for this part
| Specification | UF3C120080B7S |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 28.8 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 23 nC |
| Input Capacitance (Ciss) (Max) | 754 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, D2PAK-7 |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) | 105 mOhm |
| Technology | SiCFET (Cascode SiCJFET) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 6 V |
Pricing
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