Description
General part information
IST026N10NM5AUMA1
The IST026N10NM5 OptiMOS™ 5 power MOSFET 100 V in sTOLL package features low RDS(on)of 2.6 mOhm and 248 A high current capability. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance inbattery powered applications, includingpower toolsand gardening tools, andeScooters. The improved RDS(on)and IDratings, continuous and pulsed, enable increased battery run time and higher power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | IST026N10NM5AUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 27 A |
| Current - Continuous Drain (Id) (Tc) | 248 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 125 nC, 125 nC |
| Input Capacitance (Ciss) (Max) | 6300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 5-PowerSFN |
| Package Name | PG-HSOF-5-4 |
| Power Dissipation (Max) | 3.8 W, 313 W |
| Rds On (Max) | 2.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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