Description
General part information
IMZA75R020M1HXKSA1
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMZA75R020M1HXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 75 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 67 nC |
| Input Capacitance (Ciss) (Max) | 2217 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | PG-TO247-4 |
| Power Dissipation (Max) | 278 W |
| Rds On (Max) | 18 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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CAD
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