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RQ3P300BETB1

RQ3P300BETB1

Obsolete
Rohm Semiconductor

MOSFET N-CH 100V 10A/36A 8HSMT

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RQ3P300BETB1

RQ3P300BETB1

Obsolete
Rohm Semiconductor

MOSFET N-CH 100V 10A/36A 8HSMT

Find alt

Description

General part information

RQ3P300BETB1

MOSFET N-CH 100V 10A/36A 8HSMT

Technical Specifications

Parameters and characteristics for this part

SpecificationRQ3P300BETB1
Current - Continuous Drain (Id) (Ta)10 A
Current - Continuous Drain (Id) (Tc)36 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)19.1 nC
Input Capacitance (Ciss) (Max)1250 pF, 1250 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Package Length3.2 mm
Package Name8-HSMT
Package Width3 mm
Power Dissipation (Max)2 W, 32 W
Rds On (Max)21 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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