Specification	IV1Q06060T3G

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	69.5 nC
Input Capacitance (Ciss) (Max)	1640 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	227 W
Rds On (Max)	80 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-5 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Technical documentation and resources