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NVMYS1D6N04CLTWG

NVMYS1D6N04CLTWG

Active
ON Semiconductor

T6 40V LL AIZU, SINGLE NCH, LFPAK/ REEL ROHS COMPLIANT: YES

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NVMYS1D6N04CLTWG

NVMYS1D6N04CLTWG

Active
ON Semiconductor

T6 40V LL AIZU, SINGLE NCH, LFPAK/ REEL ROHS COMPLIANT: YES

Find alt

Description

General part information

NVMYS1D6N04CLTWG

Product PreviewPower MOSFET 40V, 1.07 mΩ, 280 A, Single N−Channel

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMYS1D6N04CLTWG
Current - Continuous Drain (Id) (Ta)35 A
Current - Continuous Drain (Id) (Tc)185 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)71 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)4301 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case4-LFPAK, SOT-1023
Package Length5 mm
Package NameLFPAK4
Package Width6 mm
Power Dissipation (Max)3.8 W, 107.1 W
QualificationAEC-Q101
Rds On (Max)1.6 mOhm, 1.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part