Specification	BSB104N08NP3GXUMA3

Current - Continuous Drain (Id) (Ta)	13 A
Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	31 nC
Input Capacitance (Ciss) (Max)	2100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	DirectFET™ Isometric MP
Package Name	MG-WDSON-2-6
Power Dissipation (Max)	2.8 W, 42 W
Rds On (Max)	10.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

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