
TSM60NB900CP
ActiveTaiwan Semiconductor Corporation
600V, 4A, SINGLE N-CHANNEL POWER

TSM60NB900CP
ActiveTaiwan Semiconductor Corporation
600V, 4A, SINGLE N-CHANNEL POWER
Description
General part information
TSM60NB900CP
600V, 4A, SINGLE N-CHANNEL POWER
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM60NB900CP |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9.6 nC |
| Input Capacitance (Ciss) (Max) | 315 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 (DPAK) |
| Power Dissipation (Max) | 36.8 W |
| Rds On (Max) | 900 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available