
HUFA76609D3ST_NL
ActiveON Semiconductor
N-CHANNEL POWER MOSFET

HUFA76609D3ST_NL
ActiveON Semiconductor
N-CHANNEL POWER MOSFET
Description
General part information
HUFA76609D3ST_NL
N-CHANNEL POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | HUFA76609D3ST_NL |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 16 nC |
| Input Capacitance (Ciss) (Max) | 425 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 (DPAK) |
| Power Dissipation (Max) | 49 W |
| Rds On (Max) | 160 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) | 3 V |
Pricing
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